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Other articles related with "insulated gate bipolar transistor (IGBT)"：
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128503 |
Yi-Fan Wu(吴毅帆), Gao-Qiang Deng(邓高强), Chen Tan(谭琛), Shi-Wei Liang(梁世维), and Jun Wang(王俊) |
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Improving dynamic characteristics for IGBTs by using interleaved trench gate |
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Chin. Phys. B
2023 Vol.32 (12): 128503-128503
[Abstract]
(106)
[HTML 0 KB]
[PDF 1607 KB]
(32)
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48503 |
Lijuan Wu(吴丽娟), Heng Liu(刘恒), Xuanting Song(宋宣廷), Xing Chen(陈星), Jinsheng Zeng(曾金胜), Tao Qiu(邱滔), and Banghui Zhang(张帮会) |
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A 4H-SiC trench IGBT with controllable hole-extracting path for low loss |
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Chin. Phys. B
2023 Vol.32 (4): 48503-048503
[Abstract]
(272)
[HTML 1 KB]
[PDF 1713 KB]
(121)
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47702 |
Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂) |
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SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current |
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Chin. Phys. B
2023 Vol.32 (4): 47702-047702
[Abstract]
(216)
[HTML 0 KB]
[PDF 719 KB]
(49)
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38502 |
Qiao-Qun Yu(喻巧群), Jiang Lu(陆江), Hai-Nan Liu(刘海南), Jia-Jun Luo(罗家俊), Bo Li(李博), Li-Xin Wang(王立新), Zheng-Sheng Han(韩郑生) |
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Superjunction nanoscale partially narrow mesa IGBT towards superior performance |
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Chin. Phys. B
2017 Vol.26 (3): 38502-038502
[Abstract]
(901)
[HTML 0 KB]
[PDF 756 KB]
(431)
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